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BUK9518-55A

INCHANGE
Part Number BUK9518-55A
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 22, 2020
Detailed Description isc N-Channel MOSFET Transistor BUK9518-55A ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16mΩ ·Fully charact...
Datasheet PDF File BUK9518-55A PDF File

BUK9518-55A
BUK9518-55A

Overview
isc N-Channel MOSFET Transistor BUK9518-55A ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Automotive and general purpose power switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 61 IDM Drain Current-Single Pulsed 246 PD Total Dissipation @TC=25℃ 136 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.
1 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Vo...


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