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DMG3N60SCT

INCHANGE
Part Number DMG3N60SCT
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 22, 2020
Detailed Description isc N-Channel MOSFET Transistor DMG3N60SCT ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.5Ω ·Fully charact...
Datasheet PDF File DMG3N60SCT PDF File

DMG3N60SCT
DMG3N60SCT

Overview
isc N-Channel MOSFET Transistor DMG3N60SCT ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 3.
5Ω ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Motor Control ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.
3 IDM Drain Current-Single Pulsed 3.
7 PD Total Dissipation @TC=25℃ 104 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.
2 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; I...


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