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DMN95H8D5HCT

INCHANGE
Part Number DMN95H8D5HCT
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 22, 2020
Detailed Description isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 950V(Min) ·Fas...
Datasheet PDF File DMN95H8D5HCT PDF File

DMN95H8D5HCT
DMN95H8D5HCT

Overview
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 2.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 950V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 950 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 2.
5 A IDM Pulse Drain Current 3 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1 ℃/W DMN95H8D5HCT isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ...


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