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DMP6180SK3-13

INCHANGE
Part Number DMP6180SK3-13
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Oct 22, 2020
Detailed Description isc P-Channel MOSFET Transistor DMP6180SK3-13 ·FEATURES ·Static drain-source on-resistance: RDS(on)≦110mΩ(@VGS= -10V; ...
Datasheet PDF File DMP6180SK3-13 PDF File

DMP6180SK3-13
DMP6180SK3-13

Overview
isc P-Channel MOSFET Transistor DMP6180SK3-13 ·FEATURES ·Static drain-source on-resistance: RDS(on)≦110mΩ(@VGS= -10V; ID= -12A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power Management Functions ·DC / DC Converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 PD Total Dissipation @TC=25℃ 40 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 3.
13 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA VGS(t...


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