DatasheetsPDF.com

FCH040N65S3

INCHANGE
Part Number FCH040N65S3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 24, 2020
Detailed Description isc N-Channel MOSFET Transistor FCH040N65S3 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 650V ·Sta...
Datasheet PDF File FCH040N65S3 PDF File

FCH040N65S3
FCH040N65S3

Overview
isc N-Channel MOSFET Transistor FCH040N65S3 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 650V ·Static drain-source on-resistance: RDS(on) ≤ 99mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 30 A IDM Drain Current-Single Pulsed 75 A PD Total Dissipation 227 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.
55 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250uA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250uA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 15A IGSS Gate-Source Leakage Current VGS=±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 650V; VGS= 0V VSDF Diode forward voltage ISD= 15A, VGS = 0 V FCH040N65S3 MIN TYP MAX UNIT 650 V 2.
5 4.
5 V 99 mΩ ±100 nA 1 μA 1.
2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
ISC makes no warran...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)