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FCH099N60E

Part Number	FCH099N60E
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 24, 2020
Detailed Description	isc N-Channel MOSFET Transistor FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max) ·Fast Switching ·100%...
Datasheet	FCH099N60E PDF File

Overview

isc N-Channel MOSFET Transistor FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Power factor correction ·Switched mode power supplies ·Uninterruptible Power Supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS VGS ID Drain-Source Voltage Gate-Source Voltage-Continuous AC (f>1Hz) Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±30 V 37 A 152 A 350 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERIST...

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