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FCPF190N65FL1

INCHANGE
Part Number FCPF190N65FL1
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 24, 2020
Detailed Description isc N-Channel MOSFET Transistor FCPF190N65FL1 ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input ...
Datasheet PDF File FCPF190N65FL1 PDF File

FCPF190N65FL1
FCPF190N65FL1

Overview
isc N-Channel MOSFET Transistor FCPF190N65FL1 ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 20.
6 A IDM Drain Current-Single Pulsed 61.
8 A PD Total Dissipation 39 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS ...


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