DatasheetsPDF.com

FDP39N20

INCHANGE
Part Number FDP39N20
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 27, 2020
Detailed Description isc N-Channel MOSFET Transistor FDP39N20 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 200V ·Static...
Datasheet PDF File FDP39N20 PDF File

FDP39N20
FDP39N20

Overview
isc N-Channel MOSFET Transistor FDP39N20 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 200V ·Static drain-source on-resistance: RDS(on) ≤ 66mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous;@Tc=25℃ 39 A IDM Drain Current-Single Pulsed 156 A PD Total Dissipation 251 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.
5 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FDP39N20 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MA...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)