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FDP060AN08A0

INCHANGE
Part Number FDP060AN08A0
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 27, 2020
Detailed Description isc N-Channel MOSFET Transistor FDP060AN08A0 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 75V ·Sta...
Datasheet PDF File FDP060AN08A0 PDF File

FDP060AN08A0
FDP060AN08A0

Overview
isc N-Channel MOSFET Transistor FDP060AN08A0 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 75V ·Static drain-source on-resistance: RDS(on) ≤ 6mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 80 A PD Total Dissipation 255 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-c...


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