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FDP8870

Part Number	FDP8870
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 27, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-sour...
Datasheet	FDP8870 PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 41mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 156 A PD Total Dissipation 160 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal ...

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