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FDP2710-F085

ON Semiconductor
Part Number FDP2710-F085
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Oct 27, 2020
Detailed Description FDP2710-F085 N-Channel PowerTrench® MOSFET FDP2710-F085 N-Channel PowerTrench® MOSFET 250V, 50A, 47mΩ General Descrip...
Datasheet PDF File FDP2710-F085 PDF File

FDP2710-F085
FDP2710-F085


Overview
FDP2710-F085 N-Channel PowerTrench® MOSFET FDP2710-F085 N-Channel PowerTrench® MOSFET 250V, 50A, 47mΩ General Description Features „ Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A „ Typ Qg(TOT) = 78nC at VGS = 10V „ Fast switching speed „ Low gate charge „ High performance trench technology for extremely low RDS(on) This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications „ PDP application „ Hybrid Electric Vehicle DC/DC converters „ High power and current handling capability „ Qualified to AEC Q101 „ RoHS Compliant ©2010 Semiconductor Components Industries, LLC.
1 September-2017, Rev.
1 Publication Order Number: FDP2710-F085/D FDP2710-F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current...



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