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1MBI2400VC-120P

Part Number	1MBI2400VC-120P
Manufacturer	Fuji
Description	IGBT
Published	Oct 27, 2020
Detailed Description	http://www.fujielectric.com/products/semiconductor/ 1MBI2400VC-120P IGBT MODULE (V series) 1200V / 2400A / 1 in one pac...
Datasheet	1MBI2400VC-120P PDF File

Overview

http://www.
fujielectric.
com/products/semiconductor/ 1MBI2400VC-120P IGBT MODULE (V series) 1200V / 2400A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Collector power dissipation Junction temperature Operating junction temperature (under switching conditions) Storage temperature Isolation voltage Between terminal and copper base *1 Screw torque *2 Icp -Ic -Ic pulse PC Tj Tjop Tstg Viso Mounting Main Terminals Sense Terminals Conditions Continuous 1ms TC=25°C TC=100°C 1ms 1 device AC : 1min.
M6 M8 M4 Maximum ratings 1200 ±20 3600 2400 4800 2400 4800 13630 175 150 -40 ~ +150 4000 5.
75 10 2.
5 (*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value :Mounting 4.
25~5.
75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.
7~2.
5 Nm (M4) Units V V A W °C VAC Nm 1 8103 SEPTEMBER 2013 1MBI2400VC-120P IGBT Modules http://www.
fujielectric.
com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on Turn-off Forward on voltage Reverse recovery time Lead resistance, terminal-chip Thermal resistance characteristics Symbols Conditions ICES VGE = 0V, VCE = 1200V IGES VCE = 0V, VGE=±20V VGE (th) VCE = 20V, Ic = 2400mA VCE (sat) (main terminal) VGE=15V Ic = 2400A VCE (sat) (chip) Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Int Rg Cies VCE=10V,VGE=0V,f=1MHz ton VCC = 60...

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