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1MBI400VF-120-50

Fuji
Part Number 1MBI400VF-120-50
Manufacturer Fuji
Description IGBT
Published Oct 27, 2020
Detailed Description http://www.fujielectric.com/products/semiconductor/ 1MBI400VF-120-50 IGBT MODULE (V series) 1200V / 400A / 1 in one pac...
Datasheet PDF File 1MBI400VF-120-50 PDF File

1MBI400VF-120-50
1MBI400VF-120-50


Overview
http://www.
fujielectric.
com/products/semiconductor/ 1MBI400VF-120-50 IGBT MODULE (V series) 1200V / 400A / 1 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Conditions IC Continuous Collector current IC pulse -IC -IC pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) - Screw torque Terminals (*3) M4 M6 Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 1.
96-6.
0 Nm (M5, M6) Grease type : Shin-Etsu Chemical Co.
,Ltd "G-747" Note *3: Recommendable Value : 0.
98-2.
0 Nm (M4) Recommendable Value : 1.
96-5.
0 Nm (M6) 1ms 1ms 1 device AC : 1min.
TC=100°C TC=25°C Maximum ratings 1200 ±20 400 480 800 400 800 3330 175 150 125 -40~+125 2500 6.
0 2.
0 5.
0 Units V V A W °C VAC Nm 1 8003 SEPTEMBER 2014 1MBI400VF-120-50 IGBT Modules http://www.
fujielectric.
com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Thermal resistance characteristics Symbols ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) RG(int) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 400mA Tj=25...



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