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FQPF9N90C

INCHANGE
Part Number FQPF9N90C
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 27, 2020
Detailed Description isc N-Channel MOSFET Transistor ·DESCRIPTION ·RDS(on) = 1.4 Ω @VGS = 10 V, ID = 4 A ·Fast Switching Speed ·100% Avalanc...
Datasheet PDF File FQPF9N90C PDF File

FQPF9N90C
FQPF9N90C

Overview
isc N-Channel MOSFET Transistor ·DESCRIPTION ·RDS(on) = 1.
4 Ω @VGS = 10 V, ID = 4 A ·Fast Switching Speed ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A ID(puls) Pulse Drain Current Ptot Total Dissipation@TC=25℃ 36 A W 30 Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Juncti...


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