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FW26025A1

INCHANGE
Part Number FW26025A1
Manufacturer INCHANGE
Description PNP Transistor
Published Oct 27, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 5000(Min)@ IC= -2A ·Collector-Em...
Datasheet PDF File FW26025A1 PDF File

FW26025A1
FW26025A1

Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 5000(Min)@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A ICM Collector Current-Peak -40 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.
5 A 160 W 2...


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