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IPA60R099C6

Part Number	IPA60R099C6
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 28, 2020
Detailed Description	Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R099C6 ·FEATURES ·With TO-220F package ·Low input capacita...
Datasheet	IPA60R099C6 PDF File

Overview

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R099C6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 37.
9 24 112 PD Total Dissipation @TC=25℃ 35 Tj Max.
Operating Junction Temperature -55~150 Tstg Storage Temperature -55...

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