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IPA60R380P6

INCHANGE
Part Number IPA60R380P6
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 28, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R380P6 ·FEATURES ·With TO-220F package ·Low input capacita...
Datasheet PDF File IPA60R380P6 PDF File

IPA60R380P6
IPA60R380P6

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R380P6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 10.
6 6.
7 29 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 4 80 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE...


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