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IPA60R600P6

Part Number	IPA60R600P6
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 28, 2020
Detailed Description	INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=60...
Datasheet	IPA60R600P6 PDF File

Overview

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
6Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 7.
3 4.
6 A IDM Drain Current-Single Pulsed 18 A PD Total Dissipation @TC=25℃ 28 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature...

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