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IPA60R800CE

INCHANGE
Part Number IPA60R800CE
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 28, 2020
Detailed Description INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=60...
Datasheet PDF File IPA60R800CE PDF File

IPA60R800CE
IPA60R800CE

Overview
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
8Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 8.
4 5.
3 A IDM Drain Current-Single Pulsed 15.
7 A PD Total Dissipation @TC=25℃ 27 W Tj Max.
Operating Junction Temperature -40~150 ℃ Tstg Storage Temperature -40~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 4.
6 ℃/W Rth(ch-a) Channel-to-ambient thermal resistance 80 ℃/W IPA60R800CE isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Isc N-Chann...


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