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IPA086N10N3

INCHANGE
Part Number IPA086N10N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 28, 2020
Detailed Description isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (ma...
Datasheet PDF File IPA086N10N3 PDF File

IPA086N10N3
IPA086N10N3

Overview
isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.
5mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 256 PD Total Dissipation @TC=25℃ 39 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBO...


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