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IPI35CN10N

INCHANGE
Part Number IPI35CN10N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 28, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI35CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on...
Datasheet PDF File IPI35CN10N PDF File

IPI35CN10N
IPI35CN10N

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI35CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
035Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGS Gate-Source Voltage 100 V ±20 V ID Drain Current-Continuous 27 A IDM Drain Current-Single Pulsed 108 A PD Total Dissipation @TC=25℃ 58 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL...


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