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IPI65R099C6

INCHANGE
Part Number IPI65R099C6
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 29, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast S...
Datasheet PDF File IPI65R099C6 PDF File

IPI65R099C6
IPI65R099C6

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 38 A IDM Drain Current-Single Pulsed 115 A PD Total Dissipation @TC=25℃ 278 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARA...


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