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IPI70R950CE

INCHANGE
Part Number IPI70R950CE
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 29, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Sw...
Datasheet PDF File IPI70R950CE PDF File

IPI70R950CE
IPI70R950CE

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 7.
4 A IDM Drain Current-Single Pulsed 12 A PD Total Dissipation @TC=25℃ 68 W Tj Max.
Operating Junction Temperature -40~150 ℃ Tstg Storage Temperature -40~150 ℃ ·THERMAL CHAR...


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