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IPP072N10N3G

Infineon
Part Number IPP072N10N3G
Manufacturer Infineon
Description Power Transistor
Published Oct 29, 2020
Detailed Description IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R D...
Datasheet PDF File IPP072N10N3G PDF File

IPP072N10N3G
IPP072N10N3G

Overview
IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI072N10N3 G IPP072N10N3 G 100 V 7.
2 mΩ 80 A Package Marking PG-TO262-3 072N10N PG-TO220-3 072N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T...


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