DatasheetsPDF.com

IPI072N10N3G

Infineon
Part Number IPI072N10N3G
Manufacturer Infineon
Description Power Transistor
Published Oct 29, 2020
Detailed Description IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R D...
Datasheet PDF File IPI072N10N3G PDF File

IPI072N10N3G
IPI072N10N3G


Overview
IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI072N10N3 G IPP072N10N3 G 100 V 7.
2 mΩ 80 A Package Marking PG-TO262-3 072N10N PG-TO220-3 072N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 Value Unit 80 A 70 320 160 mJ ±20 V ...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)