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IRFI9Z24N

International Rectifier
Part Number IRFI9Z24N
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 30, 2020
Detailed Description l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. ...
Datasheet PDF File IRFI9Z24N PDF File

IRFI9Z24N
IRFI9Z24N

Overview
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.
5KVRMS … l Sink to Lead Creepage Dist.
= 4.
8mm l P-Channel G l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding...


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