DatasheetsPDF.com

IRLI530NPbF

Infineon
Part Number IRLI530NPbF
Manufacturer Infineon
Description Power MOSFET
Published Oct 30, 2020
Detailed Description  Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink ...
Datasheet PDF File IRLI530NPbF PDF File

IRLI530NPbF
IRLI530NPbF

Overview
 Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.
5KVRMS   Sink to Lead Creepage Dist.
= 4.
8mm  Fully Avalanche Rated  Lead-Free IRLI530NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 100V 0.
10 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
Th...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)