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IRLI2910PbF

Infineon
Part Number IRLI2910PbF
Manufacturer Infineon
Description Power MOSFET
Published Oct 30, 2020
Detailed Description IRLI2910PbF  Logic –Level Gate Drive  Advanced Process Technology  Ultra Low On-Resistance  Isolated Package  High...
Datasheet PDF File IRLI2910PbF PDF File

IRLI2910PbF
IRLI2910PbF

Overview
IRLI2910PbF  Logic –Level Gate Drive  Advanced Process Technology  Ultra Low On-Resistance  Isolated Package  High Voltage Isolation = 2.
5KVRMS   Sink to Lead Creepage Dist.
= 4.
8mm  Fully Avalanche Rated  Lead-Free HEXFET® Power MOSFET VDSS RDS(on) ID 100V 0.
026 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Ful...


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