DatasheetsPDF.com

IRFB3607

Part Number	IRFB3607
Manufacturer	INCHANGE
Description	TO-262 N-Channel MOSFET
Published	Oct 30, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ...
Datasheet	IRFB3607 PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.
0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 310 A PD Total Dissipation @TC=25℃ 140 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CH...

Similar Datasheet

IRFB3607 TO-220 N-Channel MOSFET - INCHANGE
IRFB3607 TO-262 N-Channel MOSFET - INCHANGE
IRFB3607GPBF Power MOSFET - International Rectifier
IRFB3607PBF Power MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)