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IXFH18N60X

Part Number	IXFH18N60X
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 2, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V ·Fully characteri...
Datasheet	IXFH18N60X PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 320 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER...

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