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IXFH60N65X2

INCHANGE
Part Number IXFH60N65X2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 2, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :...
Datasheet PDF File IXFH60N65X2 PDF File

IXFH60N65X2
IXFH60N65X2

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 52mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Plused 120 A PD Total Dissipation @TC=25℃ 780 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
16 ℃/W IXFH60N65X2 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXFH60N65X2 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL ...


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