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IXFK360N10T

Part Number	IXFK360N10T
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 2, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance :...
Datasheet	IXFK360N10T PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.
9mΩ(Max)@VGS=10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 360 A IDM Drain Current-Single Plused 900 A PD Total Dissipation @TC=25℃ 1250 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tst...

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