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IXKH35N60C5

IXYS
Part Number IXKH35N60C5
Manufacturer IXYS
Description Power MOSFET
Published Nov 2, 2020
Detailed Description IXKH 35N60C5 COOLMOS® * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D G...
Datasheet PDF File IXKH35N60C5 PDF File

IXKH35N60C5
IXKH35N60C5

Overview
IXKH 35N60C5 COOLMOS® * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D G S ID25 = 35 A VDSS = 600 V R = DS(on) max 0.
1 Ω TO-247 AD G D S q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0.
.
.
480 V Maximum Ratings 600 V ± 20 V 35 A 25 A 800 mJ 1.
2 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 10 V; ID = 18 A VDS = VGS; ID = 1.
2 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; ...


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