DatasheetsPDF.com

IXTU2N80P

IXYS
Part Number IXTU2N80P
Manufacturer IXYS
Description Power MOSFET
Published Nov 2, 2020
Detailed Description PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 =  RDS(on) 800V 2A 6 N-Channel Enhancement Mode IX...
Datasheet PDF File IXTU2N80P PDF File

IXTU2N80P
IXTU2N80P


Overview
PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 =  RDS(on) 800V 2A 6 N-Channel Enhancement Mode IXTP2N80P TO-251 (IXTU) Avalanche Rated G D Symbol E VDSS VDGR VGSS T VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD FC S Md B Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 2 4 2 100 5 70 -55 .
.
.
+150 150 -55 .
.
.
+150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10.
.
65 / 2.
2.
.
14.
6 Mounting Torque (TO-220) 1.
13 / 10 N/lb Nm/lb.
in TO-251 TO-252 TO-263 TO-220 0.
40 g 0.
35 g 2.
50 g 3.
00 g Symbol Test Conditions O (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min.
Typ.
Max.
S TO-252 (IXTY) D (Tab) G S TO-263 (IXTA) D (Tab) G S TO-220 (IXTP) D (Tab) GDS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low QG  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier Advantages  High Power Density  Easy to Mount  Space Savings BVDSS VGS = 0V, ID = 250μA 800 V Applications VGS(th) IGSS IDSS RDS(on) VDS = VGS, ID = 50μA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125C VGS = 10V, ID = 0.
5 • ID25, Note 1 3.
0 5.
5 V 100 nA 5 A 50 A 5 6  DC-DC Converters  Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators High Voltage Pulse Power Applications © 2017 IXYS CORPORATION, All Rights Reserved DS99595F(6/17) IXTU2N80P IXTY2N80P IXTA2N80P IXTP2N80P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max 1.
...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)