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IXTA3N60P

INCHANGE
Part Number IXTA3N60P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 4, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V ·Fully characteriz...
Datasheet PDF File IXTA3N60P PDF File

IXTA3N60P
IXTA3N60P

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.
9Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3 IDM Drain Current-Single Pulsed 6 PD Total Dissipation @TC=25℃ 70 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CH...


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