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IXTA32P05T

INCHANGE
Part Number IXTA32P05T
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Nov 4, 2020
Detailed Description isc P-Channel MOSFET Transistor IXTA32P05T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·100% avalanche ...
Datasheet PDF File IXTA32P05T PDF File

IXTA32P05T
IXTA32P05T

Overview
...tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -50 V VGS Gate-Source Voltage ±15 V ID Drain Current-Continuous -32 A IDM Drain Current-Single Pulsed -110 A PD Total Dissipation @TC=25℃ 83 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.
5 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc ...


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