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IXTA10N60P

IXYS
Part Number IXTA10N60P
Manufacturer IXYS
Description Power MOSFET
Published Nov 4, 2020
Detailed Description PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS =...
Datasheet PDF File IXTA10N60P PDF File

IXTA10N60P
IXTA10N60P

Overview
PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = 600V ID25 = 10A RDS(on) ≤ 740mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062in.
) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Notes 1, 2 Maximum Ratings 600 V 600 V ±30 V ±40 V 10 A 25 A 10 A 500 mJ 10 V/ns 200 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C 300 260 1.
13 / 10 2.
5 3.
0 °C °C Nm/lb.
in.
g g Characteris...


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