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IXTA32N20T

IXYS
Part Number IXTA32N20T
Manufacturer IXYS
Description Power MOSFET
Published Nov 4, 2020
Detailed Description TrenchTM Power MOSFET IXTA32N20T IXTP32N20T VDSS = 200V ID25 = 32A RDS(on) ≤ 78mΩ N-Channel Enhancement Mode Avalanch...
Datasheet PDF File IXTA32N20T PDF File

IXTA32N20T
IXTA32N20T

Overview
TrenchTM Power MOSFET IXTA32N20T IXTP32N20T VDSS = 200V ID25 = 32A RDS(on) ≤ 78mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.
6mm (0.
062in.
) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 200 V 200 V ±20 V ±30 V 32 A 64 A 16 A 250 mJ 10 V/ns 200 W - 55 .
.
.
+175 °C 175 °C - 55 .
.
.
+175 °C 300 260 1.
13 / 10 2.
5 3.
0 °C °C Nm/lb.
in.
g g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Notes 1, 2 Characteristic Values Min.
...


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