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IXTA48N20T

INCHANGE
Part Number IXTA48N20T
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 5, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 50mΩ@VGS=10V ·Fully characteriz...
Datasheet PDF File IXTA48N20T PDF File

IXTA48N20T
IXTA48N20T

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 50mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 48 IDM Drain Current-Single Pulsed 130 PD Total Dissipation @TC=25℃ 250 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBO...


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