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IXTA52P10P

INCHANGE
Part Number IXTA52P10P
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Nov 5, 2020
Detailed Description isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤50mΩ ·100% avalanche tested ·Mini...
Datasheet PDF File IXTA52P10P PDF File

IXTA52P10P
IXTA52P10P

Overview
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤50mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -52 A IDM Drain Current-Single Pulsed -130 A PD Total Dissipation @TC=25℃ 300 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 0.
42 UNIT ℃/W IXTA52P10P isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor IXTA52P10P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Break...


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