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TK10J80E

INCHANGE
Part Number TK10J80E
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 9, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.0Ω. ·Enhancement mode: Vth = 2.5 ...
Datasheet PDF File TK10J80E PDF File

TK10J80E
TK10J80E

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.
0Ω.
·Enhancement mode: Vth = 2.
5 to4.
0V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pulsed 30 A PD Total Dissipation @TC=25℃ 250 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Cha...


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