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TK6A60D

Part Number	TK6A60D
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 9, 2020
Detailed Description	iscN-Channel MOSFET Transistor TK6A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.25Ω (MAX) ·Enhancement m...
Datasheet	TK6A60D PDF File

Overview

iscN-Channel MOSFET Transistor TK6A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.
25Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pulsed 24 A PD Total Dissipation @TC=25℃ 40 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(...

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