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TK12A80W

INCHANGE
Part Number TK12A80W
Manufacturer INCHANGE
Description TO-220 N-Channel MOSFET
Published Nov 9, 2020
Detailed Description iscN-Channel MOSFET Transistor TK12A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 450mΩ (MAX) ·Enhancement ...
Datasheet PDF File TK12A80W PDF File

TK12A80W
TK12A80W

Overview
iscN-Channel MOSFET Transistor TK12A80W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 450mΩ (MAX) ·Enhancement mode: Vth = 3.
0 to 4.
0V (VDS = 10 V, ID=0.
57mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 11.
5 A IDM Drain Current-Single Pulsed 46 A PD Total Dissipation @TC=25℃ 165 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARA...


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