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TK13E25D

INCHANGE
Part Number TK13E25D
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 9, 2020
Detailed Description iscN-Channel MOSFET Transistor TK13E25D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.19Ω (typ.) (VGS = 10 V)...
Datasheet PDF File TK13E25D PDF File

TK13E25D
TK13E25D

Overview
iscN-Channel MOSFET Transistor TK13E25D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
19Ω (typ.
) (VGS = 10 V) ·Enhancement mode: Vth = 1.
5 to 3.
5V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pulsed 52 A PD Total Dissipation @TC=25℃ 102 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
23 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Br...


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