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TK9P65W

INCHANGE
Part Number TK9P65W
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 9, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.56Ω. ·Enhancement mode: Vth =2.5 ...
Datasheet PDF File TK9P65W PDF File

TK9P65W
TK9P65W

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.
56Ω.
·Enhancement mode: Vth =2.
5 to 3.
5V (VDS = 10 V, ID=0.
35mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 9.
3 A IDM Drain Current-Single Pulsed 37.
2 A PD Total Dissipation @TC=25℃ 80 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c)...


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