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IXTA460P2

INCHANGE
Part Number IXTA460P2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 10, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 270mΩ@VGS=10V ·Fully characteri...
Datasheet PDF File IXTA460P2 PDF File

IXTA460P2
IXTA460P2

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 270mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 24 IDM Drain Current-Single Pulsed 50 PD Total Dissipation @TC=25℃ 480 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMA...


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