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IXTH30N50P

Part Number	IXTH30N50P
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 11, 2020
Detailed Description	isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance :...
Datasheet	IXTH30N50P PDF File

Overview

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Plused 75 A PD Total Dissipation @TC=25℃ 460 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PA...

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