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IXTH130N20T

IXYS
Part Number IXTH130N20T
Manufacturer IXYS
Description Power MOSFET
Published Nov 12, 2020
Detailed Description TrenchTM Power MOSFET IXTQ130N20T IXTH130N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Sym...
Datasheet PDF File IXTH130N20T PDF File

IXTH130N20T
IXTH130N20T

Overview
TrenchTM Power MOSFET IXTQ130N20T IXTH130N20T N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175°C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque TO-3P TO-247 Maximum Ratings 200 V 200 V  20 V  30 V 130 A 75 A 320 A 4 A 1 J 10 V/ns 830 W -55 .
.
.
+175 175 -55 .
.
.
+175 300 260  C  C  C °C °C 1.
...


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