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IXTV86N25T

IXYS
Part Number IXTV86N25T
Manufacturer IXYS
Description Power MOSFET
Published Nov 12, 2020
Detailed Description Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ8...
Datasheet PDF File IXTV86N25T PDF File

IXTV86N25T
IXTV86N25T

Overview
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25 = RDS(on) ≤ 250V 86A 37mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAS EAS PD TJ TJM Tstg TL TSOLD Md F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220 Maximum Ratings 250 V 250 V ± 30 V 86 A 75 A 190 A 10 A 1.
5 J 540 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
11.
.
65 / 2.
5.
.
14.
6 N/lb.
6.
0 g 5.
5 g 4.
0 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V I DSS V =V DS DSS VGS = 0V TJ = 125°C R DS(on) V GS = 10V, I D = 0.
5 • I, D25 Notes 1, 2 Characteristic Values Min.
Typ.
Max.
250 V 3 5V ± 200 nA 3 μA 250 μA 37 mΩ © 2007 IXYS CORPORATION, All rights reserved G D S TO-3P (IXTQ) (TAB G D S PLUS220 (IXTV) (TAB) G D S G = Gate S = Source Features (TAB) D = Drain TAB = Drain z International standard packages z Avalanche rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Uninterruptible power supplies DS99784A(10/07) Symbol Test Conditions (TJ = 25°C unless otherwise specified) g fs V DS = 10V, I D = 0.
5 • I, D25 Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 3.
3Ω (External) Q g(on) Qgs Qgd VGS = 10V, VD...


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