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IXTT76P10THV

IXYS
Part Number IXTT76P10THV
Manufacturer IXYS
Description Power MOSFET
Published Nov 12, 2020
Detailed Description TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S ...
Datasheet PDF File IXTT76P10THV PDF File

IXTT76P10THV
IXTT76P10THV

Overview
TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-268HV TO-247 Maximum Ratings - 100 V - 100 V 15 V 25 V - 76 A - 230 A - 38 A 1 J 298 W -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C 300 °C 260 °C 1.
13 /10 Nm/lb.
in.
2.
5 g 3.
0 g 4.
0...


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